Abstract

This work proposes to study the electrical characterization and modeling of high electron mobility transistors (HEMTS) based on AlGaN / GaN. The effect of the self-heating phenomenon on this characterization is also analyzed in high power. These components are very promising candidates for power electronics and hyper frequency applications. The objective is to understand the principle of creation of the two-dimensional electronic gas and to evaluate its properties according to the parameters of the AlGaN / GaN heterojunction. Calculations have been developed in order to follow the evolution of the charge density of the two-dimensional electron gas sheet as a function of aluminum doping and of the thickness of the barrier, and thus to optimize the characteristics of the component. Finally, a simulation on MATLAB, of the electrical characteristics of the HEMT transistor, made it possible to determine the behavior of this component for different bias voltages, and to follow the effect of the self-heating phenomenon on the performance of this component intended mainly for the power domain.